Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks
نویسندگان
چکیده
Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO2 gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessedgate devices with SiO2 dielectrics are observed to exhibit simultaneous trapping and emission processes during poststress recovery. Keywordsgallium nitride, HEMT, current collapse, defects, trapped charge, power electronics, reliability
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